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2SK1215
Silicon N-Channel MOS FET
REJ03G0813-0200 (Previous ADE-208-1176) Rev.2.00 Aug.10.2005
Application
VHF amplifier
Outline
RENESAS Package code: PTSP0003ZA-A (Package name: CMPAK R ) 3
1. Gate 2. Drain 3. Source
1 2
*CMPAK is a trademark of Renesas Technology Corp.
Rev.2.00 Aug 10, 2005 page 1 of 5
2SK1215
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Gate current Channel power dissipation Channel temperature Storage temperature Note: 1. VGS = -4 V Symbol VDSX*1 VGSS ID IG Pch Tch Tstg Ratings 20 5 30 1 100 150 -55 to +150 Unit V V mA mA mW C C
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Gate cutoff current Drain current Symbol V(BR)DSX IGSS IDSS*1 Min 20 -- 6 Typ -- -- -- -- 14 2.5 1.6 0.03 -- -- Max -- 20 12 -2.0 -- -- -- -- -- 3 Unit V nA mA V mS pF pF pF dB dB Test conditions ID = 100 A, VGS = -4 V VGS = 5 V, VDS = 0 VDS = 10 V, VGS = 0 VDS = 10 V, ID = 10 A VDS = 10 V, VGS = 0, f = 1 kHz VDS = 10 V, VGS = 0, f = 1 MHz
Gate to source cutoff voltage VGS(off) 0 Forward transfer admittance |yfs| 8 Input capacitance Ciss -- Output capacitance Coss -- Reverse transfer capacitance Crss -- Power gain PG 24 Noise figure NF -- Note: 1. The 2SK1215 is grouped by IDSS as follows. Grade Mark IDSS IGE 6 to 10 E
VDS = 10 V, VGS = 0, f = 100 MHz
F IGF 8 to 12
Rev.2.00 Aug 10, 2005 page 2 of 5
2SK1215
Typical Output Characteristics 10
VGS = 0 V
Maximum Channel Dissipation Curve
Channel Power Dissipation Pch (mW)
600
400
Drain Current ID (mA)
8
-0.1 -0.2 -0.3
6
4
200
-0.4 -0.5 -0.6 -0.7 -0.8
2
0
50 100 150 Ambient Temperature Ta (C)
0
2 4 6 8 Drain to Source Voltage VDS (V)
10
Typical Transfer Characteristics 10.0 VDS = 10 V
Forward Transfer Admittance vs. Drain to Source Voltage
Forward Transfer Admittance yfs (mS)
20
Drain Current ID (mA)
8.0 F 6.0 E 4.0
16
12
8 VGS = 0 f = 1 kHz
2.0
4
0 -2.0
-1.6 -1.2 -0.8 -0.4 Gate to Source Voltage VGS (V)
0
0
2 4 6 8 Drain to Source Voltage VDS (V)
10
Forward Transfer Admittance vs. Drain Current
Input Capacitance vs. Drain to Source Voltage 20 VGS = 0 f = 1 MHz
Forward Transfer Admittance yfs (mS)
100 50
Input Capacitance Ciss (pF)
20
VDS = 10 V f = 1 kHz
10 5
20 10 5
2 1.0 0.5 0.5
2 1 0.2
0.5 1.0 2 5 10 Drain Current ID (mA)
1.0 2 5 10 20 Drain to Source Voltage VDS (V)
Rev.2.00 Aug 10, 2005 page 3 of 5
2SK1215
Reverse Transfer Capacitance vs. Drain to Source Voltage
Output Capacitance vs. Drain to Source Voltage 20
Reverse Transfer Capacitance Crss (pF)
0.5 VGS = 0 f = 1 MHz
Output Capacitance Coss (pF)
VGS = 0 f = 1 MHz 10 5
0.2 0.1 0.05
2 1.0 0.5 0.5
0.02 0.01 0.5
1.0 2 5 10 20 Drain to Source Voltage VDS (V)
1.0 2 5 10 Drain to Source Voltage VDS (V)
20
Power Gain, Noise Figure vs. Drain to Source Voltage 35 PG 30
Power Gain PG (dB)
25 f = 100 MHz 20 15 10 5 0 2 4 6 8 10 Drain to Source Voltage VDS (V) NF 6 4 2 0 12
Rev.2.00 Aug 10, 2005 page 4 of 5
Noise Figure NF (dB)
2SK1215
Package Dimensions
JEITA Package Code SC-70 RENESAS Code PTSP0003ZA-A Package Name CMPAK / CMPAKV MASS[Typ.] 0.006g
D e
A Q c
E
HE LP L
A xM
A S A b
L1
A3 e
Reference Symbol
Dimension in Millimeters
A2
A
A1 S b b1 c b2 A-A Section Pattern of terminal position areas c1 l1 e1
A A1 A2 A3 b b1 c c1 D E e HE L L1 LP x b2 e1 l1 Q
Min 0.8 0 0.8 0.25 0.1 1.8 1.15 1.8 0.3 0.1 0.2
Nom
0.9 0.25 0.32 0.3 0.13 0.11 2.0 1.25 0.65 2.1
Max 1.1 0.1 1.0 0.4 0.15 2.2 1.35 2.4 0.7 0.5 0.6 0.05 0.45 0.9
1.5 0.2
Ordering Information
Part Name 2SK1215IGETL 2SK1215IGFTL Quantity 3000 3000 Shipping Container 178 mm Reel, 8 mm Emboss Taping 178 mm Reel, 8 mm Emboss Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.2.00 Aug 10, 2005 page 5 of 5
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
RENESAS SALES OFFICES
Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> 2-796-3115, Fax: <82> 2-796-2145
http://www.renesas.com
Renesas Technology Malaysia Sdn. Bhd. Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <603> 7955-9390, Fax: <603> 7955-9510
(c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .3.0

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